快閃記憶體為非揮發性記憶體之種類，重視之資料保存及容量。傳統非揮發性記憶體採用覆晶系當做浮動閘極材料，由於覆晶矽本身是半導體材料，會有漏電等問題，近幾年來已經發展利用Oxide-nitride-oxide三層取代傳統浮停閘，因本身是絕緣材料,漏電問題較不易呈現,且本身具有深層陷入能階,局部陷入電荷等特性可發展為多位元記憶體。
本論文中嘗試提出一個具有垂直側壁ONO三層堆疊架構分散建構在結構背端於通道下方。該分離垂直式的ONO結構將不會對通道長度的微縮造成侷限，且因槽底此對分離垂直式的ONO結構彼此間有氧化層及某厚度的矽化層做有效隔離，不會有位元間彼此互相干擾。
本論文以此推論探討克服傳統記憶體元件的可行性及發展侷限
提高元件積集密度，使造價便宜而具競爭性。這對未來發展有很大的幫助。

Flash memory is one sort of non-volatile memory, focus on the dates holding and capacity. Conventional non-volatile memory applies poly-crystalline for floating gate material, because the poly-crystalline (like poly-silicon) itself is the semiconductor material, will cause leakage problem, recently, Oxide-nitride-oxide multi-layer structure is under development for the place of conventional floating gate. Because it is the insulator material, can suppress leakage current, and it contains a deeper trapping energy level, and has a partial trapped carriers phenomenon to give a multi-bits memory solution.

My effort is to propose a pair of ONO three layers stack, which is located close to the beneath of D/S region and a column like. Such structure can overcome miniaturization limitation of channel length, and a somewhat depth oxide can promise good isolation and separation between the trapping layer and other area, and a reliable distance of the two trapped unit can prevent interference issue.

My proposal can suppose a higher devices density and a feasible and flexible solution to develop memory devices, a cost down to be more competitive, certainly bring much favor for the future improvement.

第一章 非揮發記憶體(Non-volatile Memory)的簡介 1
1-1非揮發記憶體的發展 1
1-2 floating gate device 4
1-3 MIOS(metal-insulato-oxide-silicon)元件 5
1-4 趨勢發展 6
第二章 SONOS記憶體原理及操作 10
2-1通道熱電子注入(channel hot electron injection)(CHEI)10
2-2FN穿遂(Fowler-Nordheim tunneling) 11
2-3 操做情況 12
2-3-1寫入(programming) 12
2-3-2抹除(erasing) 14
2-3-3讀取(read) 15
2-3-3-1 順向讀出(forward read) 16
2-3-3-2 反向讀出(reverse read) 17
2-4 結論 18
第三章 新元件的模擬 19
3-1簡介 19
3-2 ISE TCAD 模擬製程 19
3-3模擬電性 22
3-3-1 偏壓設定 22
3-3-2 特性曲線模擬 23
3-4結論 31
第四章 元件的設計與製作 32
4-1 製作well BODY 32
4-2 製作ONO stack 38
4-3 定義完成主動區域 39
4-4 沉積閘極氧化層 41
4-5 定義閘極 41
4-6 形成源、汲極區域 44
4-7 製作金Contact Hole 44
4-8 製作金屬層 46
Reference 48
附錄 C: Layout 圖 51

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