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博碩士論文 etd-0905107-140152 詳細資訊
Title page for etd-0905107-140152
論文名稱
Title
未來型記憶體的設計原理與製作
Futuristic Memory Device Fabrication and Design
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
68
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2007-07-16
繳交日期
Date of Submission
2007-09-05
關鍵字
Keywords
記憶體、原理
memory, theory
統計
Statistics
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中文摘要
  在這篇著作中,我會花一小部份的篇幅介紹過往的記憶元件的技術,及它們的機制,發展和趨勢。

  皆下來,將有兩個研究方向被提出,第一個是針對過去六個電晶體架構的SRAM的一種新電路架構的揮發性記憶體設計,其中該記憶體元件的電路原理及說明,核心引用RITD技術的特殊MOS等,都會做介紹,此種架構可以使用較少(三顆)電晶體來完成一SRAM的操作,除了減低複雜度,也能帶來其他有利的附加效果。

第二個要說明的主題是一種SONOS的非揮發性記憶體元件,但經由一種新的製程設計將其ONO,所謂載子陷入層裝置在一類似MOS元件的通道下方,藉由和其他成員的另一種重直型的比較,一些優劣性及效能評估將會做說明。

我們將透過一些模擬軟體來對上述研究做評估,也有一些在國家奈米研究室的實際成果展現,最後,也會附上一些新的想法及期許這篇著作能對這領域的研究有所助益。
Abstract
In this article, we will review some former technology of memory devices, and its related development, mechanism and trend.

And the two directions will be leaded, first is a new architecture of volatile memory, SRAM (static random access memory) cell. Its peripheral components and controlling circuit, its cornel tech and mechanism will be described, include a named RITD (resonant inter-band tunneling diode) phenomenon and its application in this work, can reduce the complexity of the memory unit, and bring other sides profits.

Second, an associated with other lab mate’s cooperated work, a horizontal SONOS (silicon-oxide-nitride-oxide-silicon) device will be illustrated, the ONO electrons/holes trapped region will be arranged beneath the channel of this MOS (metal oxide semiconductor) like device, what is the performance and some benchmark and comparison to another vertical SONOS design and other conventional similar devices will be done, and a real device fabrication in NDL (national device laboratory) will be completed, the detailed manufacture process will be contacted in some paragraphs.

And finally, I will bring some potential ideas and possible development in the following effort inside the paper, and wish such word can lead a more breakthrough and improvement in this field.
目次 Table of Contents
English abstract 1
Chinese abstract 2
Acknowledgement 3

Chapter1 Introduction 4
1-1 introduction 4
1-2 floating gate device 4
1-3 MIOS(metal-insulato-oxide-silicon) 5
1-4 development 6
Chapter2 SRAM fabrication and mechanism 10
2-1 Channel hot electron injection)(CHEI) 10
2-2 Owler-Nordheim tunneling 11
2-3 Operation Principle 12
2-4 Conclusion 18
Chapter3 Simulation of Device 19
3-1 Introduction 19
3-2 ISE TCAD simulation process 19
3-3 Simulation result 22
3-4 Conclusion 31
Chapter4 Manufacture and Analyze 32
4-1 well BODY 32
4-2 ONO stack 38
4-3 Active Region 39
4-4 Oxide Layer 41
4-5 Gate Definition 41
4-6 Drain/Source Region 44
4-7 Contact Hole 44
4-8 Metal Layer 46
Chapter5 Implementation and Consequence 48
5-1 Architecture of Measurement 48
5-2 Bias set 49
5-3 Writing Time/Strength 51
5-4 Threshold voltage modification 55
5-5 Stress endurance 58
5-6 Retention time 59
5-7 Conclusion 60
Reference 61
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