本文主要目的在於利用全像干涉術量測半導體構裝於IR-reflow中在不同溫升速率下翹曲之研究；全像干涉術具備全域分析、高靈敏度及非破壞性檢測等優點，故此法亦適於分析半導體構裝體之翹曲值。但全像干涉術主要是藉由位移場或溫度場等單量變化所推出之理論進行分析；故本文，將構裝體受到IR-reflow變化所產生的溫度場及位移場變化導入理論公式，並藉由實驗安排簡化理論推導，而使溫度場及位移場能由全像條紋中分離出。並利用田口式實驗規劃於不同溫升速率及溫高的溫度環境下對PBGA構裝體進行翹曲分析，進而求得溫升速率及停留溫高對翹曲量的影響。

The main aim of this study is to extending the holographic interferometry technique to measure the effect of the temperature ramp-up rate on the warpage of IC packages in the IR-reflow process . It is noted that both the warpage and the ambient temperature change can cause image fringes. Therefore, an auxiliary sphere is used to identify the fringe numbers caused by the ambient temperature change during the experiment. Then, the Taguchi method will be deduced to study the effect of the temperature ramp-up rate and peak waiting temperature on the warpage of PBGA package in the IR-reflow process.

謝誌……………………………………………………………..I
論文摘要……………………………………………………….II
目錄………………………………………………………….V
圖目錄………………………………………………………VIII
表目錄……………………………………………………XI
符號說明……………………………………………………XII

第一章 緒論…………………………………………………1
1- 1前言……………………………………………………………1
1-2 文獻回顧………………………………………………………2
1-3 組織與結構……………………………………………………6

第二章 全像攝影與全像干涉術原理及數學模式之建立…8
2-1 全像攝影術之概述…………………………………………8
2-2 全像攝影之數學模式………………………………………10
2-2-1 光波之數學表示式……………………………………10
2-2-2 全像影像之記錄過程…………………………………10
2-2-3 全像影像之重建過程…………………………………12
2-3 全像干涉術之概述…………………………………………14
2-3-1 全像干涉術之原理及方法簡介………………………14
2-3-2 全像干涉條紋之數學推演……………………………15
2-4 變形量與相位角變化之關係式……………………………19
2-5 參考物體之選用……………………………………………23
2-5-1參考物體為實心真圓球………………………………23
2-5-2 半導體構裝經由IR-reflow下變形量與全像干涉條紋的關係……………………………………………24

第三章 實驗方法………………..…………………………31
3-1 實驗設備……………………………………………………31
3-2 實驗設備之架設……………………………………………34
3-3 實驗步驟……………………………………………………35
3-4 實驗注意事項………………………………………………36
3-5 實驗數據處理步驟…………………………………………37
3-6 田口式直交表因子設立……………………………………38

第四章 實驗結果……………………………………………53
4-1 參考物之量測…………………………………………………53
4-1-1 實驗目的與方法………………………………………53
4-1-2 實驗結果………………………………………………53
4-2 PBGA構裝體之量測……………………………………………55
4-2-1實驗目的與方法………………………………………55
4-2-2 實驗結果………………………………………………56

第五章 結論與展望………………………………………78

參考文獻………………………………………………………79

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