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論文名稱 Title |
具溝槽式反射結構設計之彎曲平板波元件開發 Development of FPW Device with Groove Reflection Structure Design |
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系所名稱 Department |
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畢業學年期 Year, semester |
語文別 Language |
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學位類別 Degree |
頁數 Number of pages |
72 |
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研究生 Author |
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指導教授 Advisor |
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召集委員 Convenor |
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口試委員 Advisory Committee |
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口試日期 Date of Exam |
2011-07-30 |
繳交日期 Date of Submission |
2011-09-06 |
關鍵字 Keywords |
氧化鋅壓電薄膜、插入損失、溝槽式反射結構、彎曲平板波、電化學蝕刻停止製程 ZnO piezoelectric thin-film, insertion-loss, groove reflection microstructure, flexural plate-wave, electrochemical etch-stop |
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統計 Statistics |
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中文摘要 |
為了發展出高靈敏度與低損耗之生醫檢測微系統,本論文運用體型微加工製程技術開發出一種具溝槽式反射結構之彎曲平板波(FPW)元件,並探討不同溝槽式反射結構之深度、數量與佈局位置(DGB)對於降低FPW元件之插入損失(Insertion-loss),提升FPW元件之品質因子(Quality factor, Q)與機電耦合係數(Electromechanical coupling coefficient, K2)的影響。本論文所須建立之三個主要關鍵技術模組分別為:(1)具高C軸(002)取向之氧化鋅壓電薄膜濺鍍製程開發,(2)電化學蝕刻停止製程技術開發與(3)具溝槽式反射結構之FPW元件製程整合開發。 在最佳化濺鍍製程參數的條件下(基板溫度為300℃,射頻濺鍍功率為200 W,氬氣/氧氣流量比為30/70),本論文成功開發一種具有高C軸(002)取向之氧化鋅壓電薄膜,其X光繞射(X-ray diffraction, XRD)強度高達50,799 a.u.,且半高寬值(Full width at half maximum, FWHM)僅僅只有0.383°,XRD繞射角度34.357°非常接近其JCPDS值34.422°。另一方面,本論文開發出一種具有三電極結構之電化學蝕刻停止製程系統,可精準控制矽基板蝕刻深度之誤差於1%以內。最後,本論文成功地完成FPW元件之製程整合,包含六道薄膜沉積製程與六道黃光微影製程。經由量測不同溝槽數量、深度與佈局位置之FPW元件特性後發現,本論文所開發之FPW元件中,以溝槽數量為10個 / 深度為6 μm / DGB為50 μm之設計參數下,可呈現出最低之插入損失(-16.258)、最高之Q值(12.76)與最大之K2值(0.1876%),其中心頻率約為114.7 MHz。 |
Abstract |
Utilizing bulk micromachining technology, this thesis aimed to develop a flexural plate-wave(FPW) device with novel groove reflection microstructure for high-sensitivity and low insertion-loss biomedical microsystem applications. The influences of the amount and depth of the groove and the distance between the groove and the boundary of ZnO piezoelectric thin-film (DGB) on the reduction of insertion-loss and the enhancement of quality factor (Q) and electromechanical coupling coefficient (K2) were investigated. Three critical technology modules established in this thesis are including the development of (1) a sputtering deposition process of high C-axis (002) orientation ZnO piezoelectric thin-film, (2) an electrochemical etch-stop technique of silicon anisotropic etching and (3) an integration process of FPW device. Firstly, under the optimized conditions of the sputtering deposition process (300℃ substrate temperature, 200 W radio-frequency (RF) power and 30/70 Ar/O2 gas flow ratio), a high C-axis (002) orientated ZnO piezoelectric thin-film with a high X-ray diffraction (XRD) intensity (50,799 a.u.) and narrow full width at half maximum (FWHM = 0.383°) can be demonstrated. The peak of XRD intensity of the standard ZnO film occurs at diffraction angle 2θ = 34.422°, which matches well with our results (2θ = 34.357°). Secondary, an electrochemical etch-stop system with three electrode configuration has been established in this research and the etching accuracy can be controlled to less than 1%. Thirdly, this thesis has successfully integrated the main fabrication processes for developing the FPW device which are including six thin-film deposition processes and six photolithography processes. The implemented FPW device with RIE etched groove reflection microstructure presents a low insertion-loss of -12.646 dB, center frequency of 114.7 MHz, Q factor of 12.76 and K2 value of 0.1876%. |
目次 Table of Contents |
中文審定書...................................................................................................................I 英文審定書..................................................................................................................II 誌謝............................................................................................................................III 中文摘要......................................................................................................................IV 英文摘要......................................................................................................................V 目錄...........................................................................................................................VII 圖次......................................................................................................................IX 表次.......................................................................................................................XI 第一章 緒論..................................................................................................................1 1-1 前言與研究動機.............................................................................................1 1-2 文獻回顧.........................................................................................................3 1-2-1 剪應力(Thickness shear mode, TSM)震盪器...........….......................3 1-2-2 表面聲波(Surface acoustic wave, SAW)感測器.................................4 1-2-3 剪力水平板波(Shear horizontal acoustic plate mode, SH-APM) 感測器.................................................................................................4 1-2-4 彎曲平板波(Flexural plate wace, FPW)感測器..................................5 第二章 FPW元件之材料分析與理論.......................................................................11 2-1 壓電效應於FPW元件之應用………..........................................................11 2-1-1 壓電效應...........................................................................................11 2-1-2 壓電薄膜比較……….............................………………..................13 2-2 氧化鋅壓電薄膜晶格結構與特性……………………………..................14 2-3 氧化鋅壓電薄膜沉積方法與特性分析……………………………..........15 2-3-1 氧化鋅壓電薄膜沉積方法………………………...........................15 2-3-2 反應性射頻磁控濺鍍原理…………………………...................…16 2-3-3 X光繞射分析……………………………………………………....18 2-3-4 掃描式電子顯微鏡分析…………………………….......................20 2-4 交叉指狀電極轉換器(Interdigital transducer, IDT)之介紹與其等效 電路分析理論..........................................................................................…20 2-5 溝槽式反射結構理論…...................................……………………………24 第三章 具溝槽式反射結構設計之FPW元件設計與實驗方法.......................27 3-1 具溝槽式反射結構設計之FPW元件設計………….........................27 3-1-1 具溝槽式反射結構設計之FPW元件光罩佈局設計…....………. 27 3-1-2 具溝槽式反射結構設計之FPW元件光罩佈局設計規範..........…30 3-2 具溝槽式反射結構設計之FPW元件製作……………….............32 3-2-1 具溝槽式反射結構設計之FPW元件製作流程…………….32 3-2-2 具溝槽式反射結構設計之FPW元件製作方法……………......33 第四章 結果與討論....................................................................................................39 4-1 氧化鋅壓電薄膜之材料特性分析...............................................................39 4-1-1 基板溫度對氧化鋅壓電薄膜之影響……………………...............41 4-1-2 射頻濺鍍功率對氧化鋅壓電薄膜之影響…….........………..........43 4-1-3 氬氣/氧氣流量比對氧化鋅壓電薄膜之影響..................................45 4-2 具溝槽式反射結構設計之FPW元件特性量測結果與分析.....................47 4-2-1 溝槽式反射結構對FPW元件特性之影響......................................50 4-2-2 溝槽深度對FPW元件特性之影響..................................................51 4-2-3 溝槽數量對FPW元件特性之影響……………..…………............53 4-2-4 溝槽與氧化鋅薄膜邊界距離(DGB)對FPW元件特性之影響.......54 第五章 結論與未來展望............................................................................................56 5-1 結論...............................................................................................................56 5-2 未來展望.......................................................................................................57 參考文獻......................................................................................................................59 |
參考文獻 References |
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