Title page for etd-0906111-121106


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URN etd-0906111-121106
Author Ying-chen Liu
Author's Email Address m993100007@student.nsysu.edu.tw
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Department Materials and Optoelectronic Science
Year 2011
Semester 1
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Study on epitaxial growth of Ni on polycrystalline Cu by
electrodeposition
Date of Defense 2011-08-16
Page Count 111
Keyword
  • epitaxial growth
  • transmission electron microscopy
  • orientation
  • electrodeposition
  • EBSD
  • Abstract The present study aims at clarifying the effects of processing parameters and substrate orientation on the epitaxial growth of Ni on polycrystalline Cu by electrodeposition from a sulfamate solution. The deposits were analyzed by scanning electron microscopy (SEM), electron backscatter diffraction (EBSD), auger electron spectroscopy (AES) and transmission electron microscopy (TEM).
    Two morphologies: rough and smooth, of the substrate surface were introduced by electropolishing. Auger electron spectroscopy showed that Ni was deposited on both areas without preference. However, the deposition rate for the rough area was slightly higher at a low current density of 0.01 A/dm2. At higher current densities, both areas possessed the same rate of deposition.
    In-plane TEM results demonstrated that Ni deposited on Cu epitaxially regardless the orientation of the Cu grains, electrolyte temperature and current density. EBSD analysis indicated that the Ni epilayer with an orientation of <001>//ND grew epitaxially to as thick as 12 μm, whereas randomly oriented Ni nucleated on the epilayer having orientations of <011>//ND or <-111>//ND on prolonging deposition at current of 10 A/dm2. In other words, the epitaxial growth of Ni on Cu cannot be sustained to a thickness of hundreds of micrometers without a <001>//ND orientation.
    Advisory Committee
  • Der-shin Gan - chair
  • Pa-wei Kao - co-chair
  • Liu-wen Chang - advisor
  • Files
  • etd-0906111-121106.pdf
  • Indicate in-campus at 99 year and off-campus access at 99 year.
    Date of Submission 2011-09-06

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