由於鋅的化合物是寬能隙，因此可應用於可見光及紫外光的光電應用，被廣泛的探討及研究以及應用。先前文獻指出氮化鋅是一個n型並且為直接能隙的半導體材料，至今研究此材料並不多。氮化鋅有低電阻、高的電子遷移率的特性，因製程條件方法不同，其能隙從1.23 eV 至 3.2 eV 都有被備置出來。本論文，利用熱處理方式成功的成長出氮化鋅 p-n 接面，其起始電壓大約為1 V。氮化鋅薄膜是利用反應式射頻磁控濺鍍的方式成長，所鍍出來的薄膜電性呈現n型。經過爐管熱處理在空氣中300℃、3個小時後，發現電性轉變為p型。經熱處理後的氮化鋅呈現非常低的電阻率(2.2×10-2 Ω-cm)以及高的載子濃度 (3.88×1019 cm-3)，而氮化鋅的光學能隙可隨溫度由1.1 eV 至 1.6 eV調變。本論文很成功的藉由控制熱處理溫度備製出不同的氮化鋅之電性以及能隙 。

There are many intensive researches for zinc compounds due to their wide band gaps and potential applications in visible and UV optoelectronic technologies. Zinc nitride is a n-type semiconductor material having a direct band gap, and is not widely studied. Previous papers reported that zinc nitride is a n-type semiconductor having low resistivity and high electron mobility. Its band gap varies from 1.23 eV to 3.2 eV depending on the process condition. In this work, we successfully fabricated zinc nitride p-n junction by heat treatment on zinc nitride films. The threshold voltage of p-n junction is about 1 V. The Zinc nitride films were prepared by reactive RF magnetron sputtering. The as-grown zinc nitride thin film is a n-type material. It is found that the film treated at 300℃ for 3 hours can be changed to a p-type material. The zinc nitride has a very low resistance (2.2×10-2 Ω-cm) and high carrier concentration (3.88×1019 cm-3) after the heat treatment. The optical band gap of zinc nitride was determined as a direct band gap varying from 1.1 eV to 1.6 eV according to the temperature of heat treatment. The zinc nitride was successfully prepared with various electrical characteristics and band gaps by controlling the temperature of heat treatment.

中文摘要 ...............................................................................................................I
Abstract ............................................................................................................. II
目錄 ............................................................................................................III
圖目錄 .............................................................................................................V
Chaper 1 Introduction ..........................................................................................1
1-1 Review .................................................................................................1
1-2 Theorem...............................................................................................5
1.2.1 Van der Pauw Resistivity Measurement .....................................5
1.2.2 Hall Effect.....................................................................................7
Chaper 2 Experiment Detail.................................................................................9
2-1 Introduction of Experiment Equipments .............................................9
2.1.1 Sputter System ..............................................................................9
2.1.2 Hall Measurement System..........................................................11
2-2 Experiments Process..........................................................................12
2.2.1 Fabrication of Zinc Nitride Films...............................................12
2.2.2 Heat treatment on Zinc nitride films...........................................12
2.2.3 Fabrication of P-N Junctions ......................................................13
Chaper 3 Results and Discussions .....................................................................15
3-1 Structural Properties ..........................................................................15
3-2 Electrical Properties...........................................................................19
3-3 Optical Properties ..............................................................................22
3.3.1 Transmittance Spectra ................................................................22
3.3.2 Photoluminescence .....................................................................26
3.3.3 FTIR Analysis.............................................................................29
3-4 Characterizations of P-N Junction.....................................................31
Chaper 4 Conclusions ........................................................................................33
Reference ............................................................................................................34

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