本研究提出和證明以底切蝕刻方式於矽基板上製作矽光波導，此製作方式是以氣體SF6進行兩次乾蝕刻完成，首先藉由反應性離子蝕刻（Reactive Ion Etching，RIE）以非等向性方式，定義出此波導核心形狀；再藉由電子迴旋共振式（Electron Cyclotron Resonance，ECR）離子反應蝕刻以等向性方式完成底切內緣蝕刻，將光場分離於矽基板和波導，進而將光場侷限於矽光波導之中。
在量測部分，藉由Fabry-Perot共振腔方法量測波導損耗，其損耗完成至2.89dB/cm，由此可知此波導結構確實有侷限光場能力。為了減少波導對於單模光纖之間模態的差異，設計漸變式波導減少其耦合損耗，此波導結構其漸變寬度為20μm至6μm。其漸變式波導長700μm時波導損耗為4.13dB/cm，另外將此漸變式波導用於量測四波混合（Four-Wave Mixing，FWM）現象，證實了高能量的光場可侷限於此波導核心之中。由定量與定性分析方法得知此波導結構確實有絕佳的光場侷限能力，和於矽基板上製作光電積體電路之可能性，實現與CMOS製程技術結合，避免了昂貴的絕緣層上覆矽（Silicon-On-Insulator，SOI）技術。

In this work, a novel type of optical waveguide, namely two-step undercut-etching Si waveguide (TSUESW), fabricated in Si-substrate is proposed and demonstrated. All this waveguide processing is based on two step of SF6-based dry etching method. In the first step, an anisotropic etching by Reactive Ion Etching (RIE) is used to define the waveguide core. After that, an undercut etching through an isotropic etching processing Electron Cyclotron Resonance (ECR) is then utilized to decouple the optical light of the waveguide core from Si substrate.
In the measurement setup, an optical propagation loss coefficient of 2.89dB/cm is obtained by extracting from Fabry-Perot oscillation, suggesting the confined optical mode in TSUESW can be realized. A tapered optical waveguide is also designed and fabricated, where the core of tapered structure is defined as widths of from 20μm to 6μm for optical fiber coupler. A 4.13dB/cm of loss from 700μm long waveguide is found in such tapered waveguide. Through the nonlinear properties of Si material, a Four-Wave Mixing (FWM) behavior is observed in tapered waveguide, further confirming the optical power can be highly confined in small core of TSUESW. It also should be noted that the waveguide technology template can be processed in a Si-substrate to realize CMOS-compatible processing, avoiding high-cost Silicon-On-Insulator (SOI) technology.

目錄……………………………………1
誌謝……………………………………3
中文摘要………………………………4
英文摘要………………………………5
第一章 緒論……………………………6
1.1前言…………………………………6
1.1.1光子整合電路……………………6
1.1.2 矽基光電積體電路………………7
1.1.3 絕緣層上覆矽……………………10
1.2研究動機……………………………11
1.3論文架構……………………………13
第二章 波導的原理與模擬……………14
2.1基本導波……………………………14
2.1.1平面波導…………………………14
2.1.2絕緣層上覆矽波導結構…………16
2.1.3底切蝕刻波導結構………………17
2.1.4結果討論 …………………………23
2.2漸變式波導…………………………24
2.2.1絕緣層上覆矽結構之漸變式波導 …25
2.2.2底切蝕刻結構之漸變式波導………29
2.2.3結果討論……………………………31
第三章 實驗………………………………34
3.1 樑脊蝕刻………………………………34
3.2底切蝕刻………………………………38
3.3高溫氧化………………………………41
第四章 量測結果…………………………47
4.1 Fabry-Perot 共振方法………………47
4.2直條波導傳輸損耗……………………50
4.3漸變式波導傳輸損耗…………………56
4.4結果討論………………………………58
4.5 四波混合 ……………………………61
第五章 結論………………………………69
參考文獻…………………………………70

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