本論文研究ZnO晶向異變製作出全氧化鋅P-N二極體:首先以原子層沉積法在m-面氧化鋁基板上沉積m-面氧化鋅，再以磁控射頻濺鍍方法生長n-型c-織構取向的氧化鋅層於p-型m-面氧化鋅層上。
在物理性質量測系統(Physical Property Measurement System)內量測變溫、變磁場的霍爾效應發現m-ZnO為p-型半導體且其載子濃度~1021 1/cm3，視為高摻雜p-型半導體。為了進一步證明m-ZnO薄膜為p-型半導體，利用常溫下成長c-ZnO皆為n-型半導體的特性，將不同晶向的ZnO組合成P-N二極體。為了增進c-ZnO的薄膜品質與減少接面缺陷效應，實驗中改變了氬氧氣混合比，藉以達到優化效果。
X光繞射（X-ray diffraction）分別以2θ-ω掃描、搖擺曲線（rocking curve）、φ-掃描來觀察m-面、c-面氧化鋅與m-面氧化鋁基板晶面方向與晶體品質。量測元件P-N接面之電流電壓特性，可比較漏電及量子穿隧所造成的效應，進而瞭解P-N二極體效能之優劣以及P-N接面之界面的特性。

This thesis investigates the effects of varying the crystallographic orientations of epitaxial ZnO thin films to produce functional ZnO P-N diodes. First, with the atomic layer deposition (ALD), a p-type m-oriented ZnO epitaxial layer is deposited onto an also m-oriented Al2O3 substrate. Then an n-type ZnO layer, mostly textured along the c-axis, is grown atop to form a P-N diode by RF sputtering method.
The Hall Effect of the m-ZnO thin film is measured separately at various temperatures and magnetic fields in Quantum Design’s Physical Property Measurement System (PPMS) to determine the nature of the charge carriers. The m-oriented ZnO films are found to be p-type semiconductors, with carrier concentration approximately ~ 1021 1/cm3, which falls in the category of highly-doped degenerate semiconductor. In order to further prove that these films are indeed p-type, naturally n-type c-textured ZnO films are put on the m-films at room temperature by magnetron sputtering to see if the current-voltage (I-V) curves do follow the P-N junction characteristics. In optimizing the c-ZnO film quality and reducing the effects of the junction defects, the gas-mixture ratio between argon and oxygen was varied to compare for the changes in the performance of the resulted materials and devices.
X-ray diffraction was used to characterize the crystallographic orientations and the general qualities of the samples by 2θ-ω scan, rocking scan, φ-scan and pole figure measurement. Understanding of the P-N diode is acquired through the analysis of the leakage current and the quantum tunneling phenomena as manifested in the I-V characteristics.

摘要 1
Abstract 2
第一章 緒論 3
第二章 原理 6
2-1電漿(plasma): 6
2-2濺鍍系統: 8
2-3極化電場: 9
2-4 X射線（X-Ray）繞射原理: 12
2-5極圖法(Pole Figure): 14
2-6霍爾量測: 15
2-7 P-N接面二極體: 17
2-8 P-N接面的電流電壓特性: 19
第三章 實驗設計 25
第四章 實驗結果與分析 27
4-1樣品成長參數 27
ALD沉積p-型氧化鋅薄膜參數 27
Sputter 濺鍍n-型氧化鋅薄膜參數 27
4-2 ALD sample 2θ-ω與rocking curve 28
4-3 P-N diode 2θ-ω與I-V curve 30
4-4 pole figure scan 41
第五章 結論 43
參考文獻 44

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