本論文研究成長在矽基板上不同緩衝層的氮化銦鎵/氮化鎵多重量子井發光特性的影響。由於基板與發光層的晶格常數不匹配和熱膨脹係數差異大，會使樣品中存在一應力，此一應力會影響樣品的成長品質、發光特性及發光效率。我們成長不同層數的氮化鋁鎵緩衝層來試圖減少樣品中的應力，在本論文中我們驗證了其在光學性質上的影響。
在拉曼光譜中，我們可以觀察到氮化鎵的特性聲子模式。透過E2（high）模式的變化量，可以計算出樣品中的應力大小。由實驗結果得知，成長緩衝層能夠有效的降低樣品內的應力。藉由變溫PL、變功率PL量測，亦觀察到樣品隨著緩衝層的層數愈多應力愈小、發光性質愈好。由PLE光譜可發現氮化鎵的吸收及一些振動的行為，再經由計算後所得史塔克位移隨溫度變化的趨勢可以推論出成長氮化鋁鎵緩衝層的樣品，其主要再復合機制不只是侷限載子，而亦涉汲到與很強的載子-縱向光學聲子交互作用有關，其史塔克位移則傾向於與溫度無關。

We study the optical properties of InGaN/GaN multiple quantum wells grown on silicon (111) substrate with different buffer layers. Because of the lattice mismatch and mismatch in thermal expansion coefficient, there exists stresses in the nitride sample grown on silicon substrates, which influence the growth properties and optical properties. A set of buffer layers was proposed in order to reduce the stress in our samples. The influence on optical properties is investigated in our work.
In Raman spectra, we observed the characteristic phonon mode of GaN. According to the variation of E2 mode, the stress can be estimated. From our results, growing buffer layers can effectively reduce the stress in the sample. From temperature dependent and power dependent photoluminescence（PL) measurement, we found that appropriate buffer layers bring about less stress and better efficiency of luminescence. There are absorption of GaN and some vibrational behaviors in PLE spectra. According to the stokes shift calculated from temperature dependence PL and PLE spectra, we infer that the mechanism of recombination is not only carrier localization. The recombination is involved with the interaction of carriers and longitudinal optical phonons, and the stokes shift is independence on temperature.

目 錄


致謝 IV
中文摘要 V
Abstract VI
Publications VII
目錄 VIII
圖表次 IX

第一章 緒論 1

第二章 理論基礎與文獻回顧 5
2.1 氮化物半導體的基本性質 5
2.2 量子井 8
2.3 量子侷限史塔克效應 10
2.4 彎曲係數 11
2.5 氮化銦鎵中的激子侷域效應 12
2.6 光激發螢光原理 13
2.7 光激發螢光激發光譜原理 16
2.8 拉曼光譜原理 17
2.9 變溫下不規則的能量峰值變化 20
2.10 侷域中心的原理探討 20

第三章 樣品及實驗儀器 22
3.1 樣品介紹 22
3.2 光激發螢光量測系統 26
3.3 光激發螢光激發光譜量測系統 30
3.4　 拉曼光譜量測系統 32
第四章 結果與討論 34
4.1 拉曼光譜分析 34
4.2 PL光譜分析 39
4.3　 PLE光譜分析 52

第五章 結論 57

參考文獻 60

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