本研究主要研究Bi0.9Pb0.1FeO3塊材，長時間在一大壓氧氣下不同退火時間以及不同成長條件(成長溫度及厚度)下薄膜的物性(晶格變化、表面形貌、介電性及鐵電性等多項性質。不只是希望可以找到較佳的成長條件，也希望可以明瞭退火時間及成長條件影響物性的機制。 研究發現，摻雜鉛確實可以穩定BiFeO3相，但是，只是延後Bi元素損失的問題。摻鉛Bi0.9Pb0.1FeO3的結構大幅變為準方形晶格，但因氧的分佈顯示並非中心對稱，最終增加強Bi0.9Pb0.1FeO3的介電系數。而Bi0.9Pb0.1FeO3薄膜的晶格結構、介電性與成長條件有極大的關係，其中成長溫度7000C時具有最好的介電性。而薄膜晶粒隨薄膜厚度而逐漸變大，晶粒本身的電滯特性明顯，然晶粒界似乎是缺陷的集中區，故大面積量測介電性時，因漏電而無飽和電滯現象。各項細節將於本文中詳細說明。

In this study, we study the annealing effect of Bi0.9Pb0.1FeO3 bulk in various time span and the various growth conditions of Bi0.9Pb0.1FeO3 thin film to physical proporties, such as crystal structure, surface amorphous, delectric properties. With these effort, this study wish to find a better growth condition for Bi0.9Pb0.1FeO3 film that exhibit the best ferroelectric property, and to understant the possible mechanism underlaying the growth conditions to the physical properties.
It is found that the doping of Pb in Bi0.9Pb0.1FeO3 compound does stabalize the formation of single phase Bi0.9Pb0.1FeO3 ,however, this stabalization can only postpone the decay of Bi0.9Pb0.1FeO3 properties when is annealed in a long period of time. The crystal strucutre of Bi0.9Pb0.1FeO3 is very close to a pseudocubic structure in which oxgyen sites locate noncenter-symmetrically that generates a stronge electric polariztion. The various growth conditions has a very stong influence to the physical properties of Bi0.9Pb0.1FeO3 thin films. For those films grwon at 700oC exibits the best delectricity. The grain size of films grows as grwoth time as resutl of this the thicker the film thelarger the grain size. The electric hysterises property measured by PFM is observed for grain itself, however, the grain boundaries where accumulates many possible defects exhibits a large electric leakage therefore no saturated polarization is observed if a large area of electrode is used.

第一章 簡介 1
第二章 基本理論 2
2-1 多鐵性材料簡介 2
2-2 物質的磁性 3
2-2-1 順磁性(Paramagnetism) 4
2-2-2 反磁性(Diamagnetism) 5
2-2-3 鐵磁性(Ferromagnetism) 5
2-2-4 反鐵磁性(Anti-ferromagnetism) 6
2-3 介電與極化特性 9
2-3-1 極化的機制 9
2-3-2 介電性和介電崩潰 10
2-4　鐵電性質[6] 15
2-4-1 鐵電材料特性 15
2-4-2 電滯曲線 18
2-5 阻抗與等效電路分析法 20
2-5-1 阻抗的介紹 20
2-5-2 等效電路阻抗分析法之應用 21
2-6　多鐵性材料鐵酸鉍BiFeO3的基本特性 23
2-6-1　鐵酸鉍晶格結構 23
2-6-2　鐵酸鉍電特性 26
2-6-3　鐵酸鉍磁特性 27
第三章 儀器介紹與實驗方法 29
3-1製程儀器簡介 29
3-1-1 射頻磁控濺鍍系統 29
3-1-2 光學微影製程 32
3-1-3 電子束蒸鍍系統 33
3-1-4 離子束蝕刻系統 34
3-2 量測儀器簡介 36
3-2-1　X-ray繞射系統 36
3-2-2　原子力顯微鏡 38
3-2-3　阻抗分析儀 40
3-3　實驗方法 42
3-3-1 Bi0.9Pb0.1FeO3靶材製作 42
3-3-2 Bi0.9Pb0.1FeO3/SrRuO3/SrTiO3多層薄膜成長 45
3-3-3 Bi0.9Pb0.1FeO3/SrRuO3/SrTiO3多層薄膜微影蝕刻製程 50
3-3-4 介電性質量測 51
第四章 實驗數據分析討論 53
4-1 Bi0.9Pb0.1FeO3晶體結構分析 54
4-1-1 Bi0.9Pb0.1FeO3塊材晶體結構分析 54
4-1-2 Bi0.9Pb0.1FeO3薄膜晶體結構分析 58
4-2 Bi0.9Pb0.1FeO3表面形貌分析 66
4-3 Bi0.9Pb0.1FeO3電性分析 74
4-3-1 Bi0.9Pb0.1FeO3 塊材阻抗模擬分析 74
4-3-2 Bi0.9Pb0.1FeO3薄膜介電性分析 82
4-3-3 Bi0.9Pb0.1FeO3薄膜鐵電性分析 92
第五章 結論 100
參考文獻 101
附錄 103

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