本論文研究利用磁控射頻濺鍍方式使n型ZnO成長於p型Si基板的緩衝層上，其緩衝層為在Si基板之原生氧化矽(SiOx)上成長數奈米厚度的純Al，利用Al原子與SiOx反應使SiOx還原成純Si而Al則氧化成AlOx。形成以ZnO與AlOx組成的pin二極體。以期使能在電性與晶體品質上優於以ZnO及SiOx形成的pin二極體。
測量方式包含穿透式電子顯微鏡(transmission electron microscopy)觀察ZnO與基板介面間的磊晶關係，及ZnO、純Al、SiOx之間各介面的結構與缺陷：X光繞射(X-ray diffraction)分別以ω-2θ掃描、搖擺曲線(rocking curve)、低掠角繞射(grazing incidence X-ray diffraction GIXRD)、極圖掃描(pole figure scan)來了解ZnO之晶面方向、晶格常數變化、結晶品質及與基板的磊晶關係；藉由比較pin二極體本身漏電及介面穿隧效應來了解pin二極體的優劣。

In this thesis, n-type ZnO thin films are grown on buffered p-type Si substrates by RF sputtering. The buffer is a pure nanometer-thick Al layer deposited onto a Si substrate that has a native SiOx over-layer. The Al- layer is meant to react with the native oxide and reduce it back to the pure Si formation when the Al-layer is itself oxidized into AlOx. The pin diodes with ZnO grown on AlOx are expected to outperform those with ZnO on SiOx on the aspects of electrical quality and crystallographic
orientations.
The transmission electron microscopy was employed to study the epitaxial relationship between the ZnO layers and the Si substrates, the crystal structure, and defects at the ZnO-Al or Al-SiOx interfaces. X-ray diffraction studies through ω-2θ, rocking curve, GIXRD and pole-figure scans were also conducted to see the differences between as-deposited and post-annealing treated samples concerning with the ZnO crystallographic orientations and general qualities. Through comparisons of the leakage current and the tunneling behaviors , the electrical
measurements can be used to analyze the pin devices.

論文審定書
致謝
中文摘要
英文摘要
第一章、緒論……………………………………………………………11
1-1氧化鋅-結構及用途 …………………………………………11
1-2 氧化鋅成長方式 ……………………………………….………12
1-3 二極體種類 ………………………………………….…………14
1-3-1 PN接面二極體 …………………………………….………14
1-3-2 PIN二極體……………………………………….…………15
1-3-3 Schottky-Barrier 二極體……..…………………………16
1-3-4 穿隧二極體 ……………………………………….………18
第二章、實驗儀器原理…………………………………………………19
2-1 濺鍍原理(Sputtering) ……………………………………..…19
2-2 電漿(Plasma) …………………………………………...………20
2-3射頻濺鍍&直流濺鍍 …………………………………..………22
2-4 磁控濺鍍系統(Magnetron Sputtering System) ……….……22
2-5 X光繞射(X-ray Diffraction) …………………………………23
2-5-1 θ/2θ 掃描(θ/2θ scan) ………………………………24
2-5-2 Rocking Curves(ω Scan) ………………..………………25
2-5-3 Grazing Incidence X-ray Diffraction (GIXRD) ………26
2-5-4 Pole Figure Scans………………………………………...27
2-6穿透式電子顯微鏡(Transmission Electron Microscopy) …28
2-7 PIN接面二極之電流電壓特性(I-V Characteristic) ……29

第三章、實驗方法………………………………………………………31
3-1 樣品製備流程 …………………………………………………31
3-2 樣品成長 ………………………………………………………31
第四章、實驗結果與分析………………………………………………34
4-1 X-Ray繞射量測…………………………………………………35
4-1-1 ω-2θ 掃描結果 …………………………………….…35
4-1-2 Rocking Curve…………………………………………..…36
4-1-3 Grazing Incidence X-ray Diffraction………………….…37
4-1-4 Pole Figure……………………………………………….…39
4-2 TEM 電子繞射量測 …………………………………………40
4-3 電流電壓(I-V)特性量測………………………………………44
第五章、結論…………………………………………………………47

 
圖1.1.1 ZnO 纖鋅結構………………………………………….…………………11
圖1.1.2 ZnO正四面體結構……………………………………………………..…11
圖1.2.1 Si鑽石結構……………………………………………………………….12
圖1.3.1 pn接面…………………………………………………….……………..14
圖1.3.2 pn接面電子電洞複合……………………………………………………14
圖1.3.3 pn接面漂移電場……………………………………..…………………15
圖1.3.4 pn接面空乏區能帶圖……………………………………………………15
圖1.3.5 pin二極體………………………………………………………………..15
圖1.3.6典型pin二極體電流對電壓曲線………………………………………..16
圖1.3.7傳統蕭特基二極體電流對電壓曲線……………………………………..17
圖1.3.8傳統蕭特基二極體電流對電壓曲線……………………………………..17
圖1.3.9典型tunnel二極體電流對電壓曲線……………………………………..18
圖2.1.1 sputtering 成核過程………………………………………………………19
圖2.1.2 sputtering 晶粒成長過程…………………………………………………19
圖2.1.3 sputtering 晶粒聚集過程…………………………………………………19
圖2.1.4 sputtering 縫道填補過程………………………………………………..20
圖2.1.5 sputtering 薄膜成長過程…………………………………………………20
圖2.2.1 plasma 分子分解過程……………………………………………………..21
圖2.2.2 plasma 分子被激發過程………………………………………………….21
圖2.2.3 plasma 分子被激發過程………………………………………………….21
圖2.2.4 plasma 分子被離子化過程………………………………………………21
圖2.5.1 θ/2θ scan…………………..…………………………………………….24
圖2.5.2 ω scan…………………………………………………………………….25
圖2.5.3 ω scan…………………………………………………………………….25
圖2.5.4 晶格所受應力變化………………………………………………………..25
圖2.5.5 GIXRD scan………………………………………………………………..26
圖2.7.1 pin二極體載子濃度………………………………………………………29
圖2.7.2 pin二極體電流對電壓曲線………………………………………………30
圖2.7.3 pin二極體順偏到逆偏曲線………………………………………………30
圖3.1.1 鋁(Al)緩衝層之成長…………………………………………….………32
圖3.1.2 鋁(Al)緩衝層成長完後熱處理…………………………………………..32
圖3.1.3 氧化鋅薄膜之成長…………………………………………..…………..33
圖3.1.4 氧化鋅薄膜成長後熱處理…………………………….………………..33
圖3.1.5 樣品成長完後熱處理……………………………………………..…….34
圖4.1.1 退火前 ω-2θ curve…………………………………………………35
圖4.1.2 退火後 ω-2θ curve…………………………………………………35
圖4.1.3 樣品退火前後strain變化……………………………………………….36
圖4.1.4 樣品退火前 ZnO(0002) rocking curve…………………………………36
圖4.1.5 樣品退火後 ZnO(0002) rocking curve…………………………………..36
圖4.1.6 樣品退火前 GIXRD curve……………………………….………………37
圖4.1.7 樣品退火後 GIXRD curve………………………………………………..37
圖4.1.8 校正後樣品退火前 GIXRD curve………………………………………..38
圖4.1.9 校正後樣品退火後 GIXRD curve………………………………………..38
圖4.1.10 GIXRD為何能看到ZnO(101 ‾3)示意圖…………………………..…….39
圖4.1.11 GIXRD為何能看到ZnO(101 ‾3)示意圖………………………..……….39
圖4.1.12 ZnO(103)pole Figure…………………………….……………………..39
圖4.1.13 ZnO(103)pole Figure …………………………………………..………39
圖4.2.1 樣品C退火後TEM圖……………………………………………………40
圖4.2.2 樣品C退火後TEM區域放大圖……………………………………….…40
圖4.2.3 Si基板電子繞射圖………………………………………………………….41
圖4.2.4 ZnO、介面、Si電子繞射圖……………………………………….………41
圖4.2.5 ZnO電子繞射圖………………………….……………………………….41
圖4.2.6 樣品C退火後TEM圖…………………………………………………..42
圖4.2.7 樣品C退火後TEM區域放大圖…………………………………………42
圖4.2.8 Si基板電子繞射圖…………………………………………………………43
圖4.2.9 ZnO、介面、Si電子繞射圖…………………………………………………43
圖4.2.10 ZnO電子繞射圖…………………………………………………………43
圖4.3.1 樣品A I-V curve……………………..………………………………….44
圖4.3.2 樣品B I-V curve………………………..……………………………….44
圖4.3.3 樣品C I-V curve…………………………..…………………………….44
圖4.3.4 樣品D I-V curve…………………………………………………………45
圖4.3.5 樣品E I-V curve……………………...………………………………….45
圖4.3.6 樣品退火前 I-V curve…………………………...………………………45
圖4.3.7 樣品退火後 I-V curve…………………………...………………………46

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