本文將討論以分子束磊晶(Molecular beam epitaxy)方式，在藍寶石基板上成長矽摻雜的氮化鎵薄膜及奈米點之樣品。在薄膜方面，利用不同溫度的矽分子束源(TSi = 1100 oC ~ 1300 oC)來控制矽在氮化鎵薄膜內的摻雜濃度，經由van der Pauw霍爾量測法得知樣品內載子濃度及載子遷移率。隨矽摻雜的濃度增加，可以有效提高樣品的載子濃度與載子遷移率，載子濃度最高可達8 × 1019 cm-3，載子遷移率最高可達194 cm2/V-s。隨著矽摻雜濃度的增加，光致螢光的訊號強度也跟著變強，但譜峰的半高寬也由47 meV增加到117 meV。拉曼光譜方面，隨矽摻雜濃度的增加，E2(high)的訊號會由569.4 cm-1位移到567.9 cm-1，而A1(LO)在736.7 cm-1的訊號會逐漸消失。在奈米點方面，隨著成長時間增加，奈米點的尺寸由高1.2 nm、寬40 nm增加到高5.6 nm、寬110 nm，而分佈密度也由1.9x1010 cm-2降低至6x109 cm-2。根據原子力顯微鏡所呈現的表面形貌，推測這些奈米點的成長方式應近似Stranski-Krastanow模式。

In this thesis, we study a series of Si-doped GaN thin films and nanodots. These samples are growth on c-face sapphire substrate by Molecular Beam Epitaxy. In Si-doped GaN thin film growth, different Si cell temperature are used to control the dopant concentration. Van der Pauw hall measurement is used to measure the carrier concentrations and the mobilities. As increase Si cell temperature, the carrier concentration and the mobility increase. The maximum carrier concentration is 8 × 1019 cm-3, and the maximum mobility is 194 cm2/V-s. As increasing the Si dopant concentration, the near band edge photoluminescence emission peak intensity increases, but the full width at half maximum broaden from 47 meV to 117 meV. In Raman measurement result, with the increasing of Si dopant concentration, the E2(high) mode shifts from 569.4 cm-1 to 567.9 cm-1. The A1(LO) mode disappears gradually. In the nanodot growth, the AFM images show that the nanodots size become large as increasing the growth time. The nanodots size is change from 1.2 nm to 5.6 nm high and 40 nm to 110 nm wide, but the density of the nanodots decreases from 1.9 × 1010 cm-2 to 6 × 109 cm-2 at 15 sec and 90 sec growth, respectively. According to the AFM image of the nanodots surface morphology, the nanodots growth mode should be the Stranski-Krastanow mode.

目錄
第一章 前言.................................. 1
第二章 實驗
2.1 分子束磊晶系統.......................4
2.2 晶體成長方式.........................7
2.3 樣品的製備與磊晶程序.................8
2.3.1 基板準備...........................9
2.3.2 磊晶程序.......................... 9
2.4 樣品成長參數........................10
第三章 量測系統與簡易原理介紹
3.1 光致螢光............................19
3.1.2 光致螢光原理......................19
3.1.3 光致螢光系統裝置..................20
3.2 霍爾量測............................21
3.2.1 霍爾效應原理......................21
3.2.2 van der Pauw量測法及其實驗裝置....21
3.3 拉曼光譜............................23
3.3.1 拉曼光譜原理......................23
3.3.2 拉曼光譜系統裝置..................24
3.4 反射是高能電子繞射裝置..............24
3.5 掃描式電子顯微鏡....................25
3.6 高解析度X光雙晶繞射.................26
3.7 原子力顯微鏡........................27
第四章 實驗結果與討論
4.1 矽摻雜的氮化鎵薄膜
4.1.1 反射是高能電子繞射圖..............38
4.1.2 掃描式電子顯微鏡..................38　
4.1.3 霍爾量測..........................38
4.1.4 光致螢光光譜......................39
4.1.5 拉曼光譜..........................40
4.1.6 X光繞射分析.......................40　
4.2 氮化鎵的奈米點結構..................41　
4.3 矽摻雜的氮化鎵奈米點結構............41
第五章 結論..................................52
5.1 矽摻雜的氮化鎵薄膜....................52
5.2 奈米點結構............................52
參考資料.......................................54

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