本實驗的目的是在室溫的條件下成長氧化銦(Indium oxide)透明薄膜電晶體，其通道層是以活性射頻磁式濺鍍的方式去製作，首先固定濺鍍功率為40W，氣體壓力為1.5mTorr，僅改變氬氣和氧氣的比例，進行Ino電阻率及X-ray繞射。目前氧化銦在50%通氧量的條件下電阻率約為4.7×104Ω-cm。此外InO-TFT的電極材料和絕緣層則是採用ITO及SiNx，ITO的電阻率約為7×10-4Ω-cm， SiNx在1MV/cm電場下的漏電流約為1×10-10A/cm2。
接下來固定氣體壓力為1.5mTorr，氬氣和氧氣的比例為50%，僅改變濺鍍功率，由40W調升至50W、60W，其中在濺鍍功率為50W、通道長寬各為20μm的條件下，其最佳的電子遷移率為3cm2V-1S-1，VT為3V，電流開關比為1.7×106，subthreshold swing為1.34V/decade。

Transparent Ino (Indium oxide) thin-film transistors fabricated by reactive ratiofrequency (rf) magnetron sputtering at room temperature
were demonstrated. The resistivity and X-ray diffraction pattern of the films prepared at sputtering power of 40W、gas pressure of 1.5mTorr , and different oxygen partial pressures were investigated . At a 50% oxygen partial pressure , the resistivity of the films is 4.7×104 Ω-cm . Indium tin oxide (ITO) and silicon nitride (SiNx) thin films are used as the electrode and gate insulator . The resistivity of ITO electrodes is 7×10-4 Ω-cm .On the other hand , the maximum leakage current of less than 1×10-10A/cm2 was obtained for the SiNx layer at an electric field of 1 MV/cm .
Sputtering power is changed from 40W to 60W at the situation of gas pressure of 1.5mTorr and oxygen partial pressures of 50% . When sputtering power is 50W , the measured saturation mobility , threshold voltage , on/off ratio and subthreshold swing are 3 cm2v-1s-1 , 3V , 1.7×106 and 1.34 V/decade , respectively for a 20μm channel length Ino TFT .

中文摘要
Abstract
目錄
圖目錄
第一章 導論
1-1引言…………………………………………………..1
1-2 動機………………………………………………….2
1-3 非晶矽薄膜電晶體…………………………………4
第二章 製程材料與儀器介紹
2-1 氧化銦錫(ITO)和氧化銦(In2O3)………………….6
2-2 氮化矽(Si3N4)………………………………………9
2-3 RF磁式濺鍍系統……………………………………10
2-4量測儀器介紹
2-4-1橢圓偏光儀(Ellipsometer)……………………12
2-4-2四點探針(Four-point-probe)………………….13
2-4-3 X光繞射儀(XRD).............................................14
2-4-4半導體参數分析儀(Semiconductor Parameter Analyzer)……………………………………16
第三章 實驗的方法與步驟
3-1實驗準備
3-1-1 基板的選擇與清洗的流程……………………….18
3-1-2 靶材的選擇……………………………………….19
3-1-3 濺鍍機的操作.........................................................20
3-2材料的成長條件
3-2-1 氧化銦錫(ITO)………………………………….23
3-2-2 氧化銦(In2O3)…………………………………..24
3-2-3 氮化矽(Si3N4)…………………………………..25
3-3元件製作流程
3-3-1光罩設計………………………………………..26
3-3-2元件製程………………………………………..28
第四章 結果與討論
4-1 氧化銦材料分析………………………………………33
4-2 氧化銦透明薄膜電晶體……………………………….34
4-3 未來改進方向………………………………………….39
參考文獻

1. 張鼎張，“薄膜電晶體與平面顯示器”，2007
2. 陳一帆，中山大學光電工程研究所論文,磁式濺鍍機ITO薄膜沉積之
後熱處理效應.
3. 利用磁式濺鍍機成長矽與氮化矽於矽基板和玻璃基板, 楊啟璋,
中山大學光電工程研究所論文 , 2007
4. 室溫氧化銦透明薄膜電晶體的製備‚ 郭于鈺‚ 國立中山大學光電
工程研究所碩士論文‚2007
5. Jin-Yong Oh, Jin-Ho Yang, Hyun-Sik Kim and Seong-Ju Park, Journal
of the Korean Physical Society, Vol. 48, No. 2, February 2006，
pp.271~274
6. Hong Xiao, “Introduction to semiconductor manufacturing
technology,” Ch5.
7. Elvira M. C. Fortunato , Pedro M. C. Barquinha , Ana C. M. B. G. Pimentel , Alexandra M. F. Goncalves , Antonio J. S. Marques.
Luis M. N. Pereira , and Rodrigo F. P. Martins , Advanced Materials
, vol. 17 , No. 5 , March 8 , 2005
8. J. Siddiqui, E. Cagin, D. Chen, and J. D. Phillips, Applied physics letters 88, 212903 (2006)