幾近於無錯位的氮化鎵奈米柱利用自組式方式經由分子束磊晶法成長於矽(111)基板上，奈米柱的成長沒有使用任何的催化劑輔助，在不同的成長條件下，這些奈米柱的寬度維持在10 nm 至大約 800 nm，而在薄膜之上的高度則介於50 nm 至 3

Nearly dislocation-free vertical GaN pillars in nanoscale were grown on Si (111) surface through self-assembly by molecular-beam epitaxy. No extra catalytic or nanostructural assistance has been employed. These nanorods have a lateral dimension from 10 nm to ~ 800 nm and a height of 50 nm to 3

中文提要………………………………………………………….I
中文摘要…………………………………………………………II

Abstract………………………………………………..…………IV

Contents…………………………………………………………VI

Figure list…………………………………………………VIII

Chapter 1 Introduction……………………………………………1
1.1 GaN base devices and semiconductor nanodevices…… 1
1.2 Fabrication of GaN nanomaterials…………………2
1.3 Research motivation…………………………………… 3
1.4 Organization of the thesis……………………………4
References…………………………………………………………6

Chapter 2 A brief review of growth and characterization techniques………...………………………………………….9
2.1 GaN nanorod growth………………………..…………………9
2.2 Reflection high-energy electron diffraction…………...11
2.3 Luminescence of semiconductor…………………………..13
2.4 Raman spectroscopy………………………………….………15
References………………………………………………………..19

Chapter 3 System setup and experimental procedures……30
3.1 System setup……………………………………………………30
3.1.1 Plasma-assisted molecular beam epitaxy system….30
3.1.2 Photoluminescence (PL) system……………………………31
3.1.3 Micro-Raman and micro-PL system…………………………31
3.2 Experimental procedures………………………………………32
3.2.1 Sample preparation…………………………………………32
3.2.2 GaN nanorod growth…………………………………………33
3.2.3 Analyses of GaN nanorods………………………………35
References………………………………………………………….36


Chapter 4 GaN nanorod growth……………………………………45
4.1 GaN nanorod grown without buffer layer…………………45
4.1.1 Different NBEP/GaBEP ratios………………………………45
4.1.2 Different substrate temperatures……………………51
4.1.3 Summary………………………………………………………53
4.2 GaN nanorod grown with GaN buffer layer…………………55
4.2.1 Different NBEP/GaBEP ratios………………………………55
4.2.2 Different GaN buffer layer temperatures………………57
4.2.3 Time evolution of GaN nanorods…………………………59
4.2.4 Summary…………………………………………………….64
References………………………………………………………..65

Chapter 5 Optical properties of GaN nanorod…………………94
5.1 Photoluminescence spectroscopy of GaN nanorod…………94
5.1.1 Temperature dependent PL spectroscopy…………………94
5.1.2 Physical property of luminescent emission at 3.425 eV……………….96
5.1.3 Summary……………………………………………………….97
5.2 Micro-Raman spectroscopy of a single free-standing GaN nanorod………98
5.2.1 First-order Raman modes of a single GaN nanorod……98
5.2.2 Laser-power-density dependent Raman spectroscopy…101
5.2.3 Physical property of nanorod related phonon mode102
5.2.4 Summary………………………………………………..103
References……………………………………………………..104

Chapter 6 Conclusions………………………………………124

Appendix A Cathodoluminescence spectroscopy of single freestanding GaN nanorod.…..………………………127

Appendix B Raman spectroscopy of GaN…………………………136

Appendix C InN grown on Si(111) and sapphire substrates by PAMBE………………………………………………144

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