在此研究中，我們將研究二氧化鈦、鎳摻雜二氧化鈦與氧化鎳薄膜在透明導電玻璃、玻璃與矽基板上不同之特性與應用。我們會進行二氧化鈦、鎳摻雜二氧化鈦與氧化鎳薄膜之物理、化學、光、電致變色和電特性方面的量測與討論。物理特性方面，由場放射掃描電子顯微鏡和X光繞射來看薄膜的厚度和結構。化學特性部分，由X射線光電子光譜學和傅立葉轉換紅外光譜儀來看薄膜的化學組成比和化學鍵結。光特性部份，由反射式光譜儀來量測金屬氧化薄膜之穿透率，電致變色特性部份，由循環伏安儀與循環伏安法來量測薄膜特性，電特性部份，由電壓-電流特性圖與電容-電壓特性圖來看薄膜的漏電流與電容值。為了改善薄膜眾多特性，我們將進行氧氣、氮氣和笑氣下回火處理的研究。
在進行鎳摻雜二氧化鈦實驗中，我們選用氯化鎳當做實驗中的摻雜溶液，以改善電特性方面。在700度中通笑氣回火處理下，未摻雜的二氧化鈦薄膜之介電常數為29；摻雜後的二氧化鈦薄膜之介電常數提升到94。

An uniform titanium oxide film was grown on indium tin oxide/glass substrate with the aqueous solutions of ammonium hexafluoro-titanate and boric acid. The as-deposition titanium oxide film shows good electrochromic property because of fluorine passivation on defects and dangling bonds. The transmittance of as-grown titanium oxide on indium tin oxide/glass with a thickness of 270 nm is about 85% at the wavelength of 550 nm. By 50 times electrochromic cycling test, the transparency ratio of TiO2 film is kept at 45% between fully colored state and fully bleached state at the wavelength of 550 nm.
Under ultraviolet illumination, the growth of titanium oxide film grown is enhanced. The root mean squared value of surface roughness is improved from 3.723 to 0.523 nm. Higher fluorine concentration from (NH4)2TiF6 passivate defects and dangling bonds of titanium oxide during the growth. After 50 times electrochromic cycling test, the transparency ratio UV-TiO2 is improved from 37.5% to 42.4% at the wavelength of 550 nm.
The electrical characteristics of nickel-doped titanium oxide films on p-type (100) silicon substrate by liquid phase deposition were investigated. For nickel doping, the nickel chloride was used as the doping solution and the electrical characteristics were improved. After thermal annealing in nitrous oxide at 700 oC, the dielectric constant of polycrystalline titanium oxide film is 29 and can be improved to 94 with nickel doping.
Uniform nickel oxide film was grown on a conducting glass substrate with the aqueous solution of saturated NiF2•4H2O solution and H3BO3. The quality of NiO is improved after thermal annealing at 300 oC in air from the decrease of oxygen vacancy and better F ion passivation on defects and dangling bonds. The transmittance of as-deposited NiO/ITO/glass with a thickness of 100 nm is about 78% and improved to 88% after annealing at the wavelength of 550 nm. By the electrochromic cycling test 50 times on annealed NiO film, the transparency ratio is kept at 48% between fully colored state and fully bleached state at the wavelength of 550 nm. By the memory time test, the annealed LPD-NiO film has shorter memory time.
The growth of nickel oxide film grown on indium-tin oxide/glass substrate by liquid phase deposition is enhanced under ultraviolet photo-irradiation was studied. a-Ni(OH)2 dominates the composition of as-grown NiO film. After thermal treatment at 300 oC,a-Ni(OH)2 is transformed into NiO. For thermally treated NiO under ultraviolet photo-irradiation, the recrystallization and the colored and bleached transmittance after 50 times electrochromic test were improved. Both improvements come from fluorine passivation.
Transparent and conductive thin films consisting of p-type nickel oxide (NiO) semiconductors were prepared by liquid phase deposition. A resistivity of 8 x 10-1 -cm was obtained for NiO films prepared at liquid phase deposition. The transmittance of NiO is almost 70 % in the 550 nm wavelength was obtained for a 384.3 nm thick NiO film.

CONTNETS

ACKNOWLEDGEMENT ii
摘 要 iv
ABSTRACT v
CONTNETS viii
LIST OF FIGURES xi
Chapter 1 1
Introduction 1
1-1 Metal oxides thin film 1
1-1.1 Titanium dioxide 1
1-1.2 Nickel oxide 1
1-2 Electrochromic 2
1-3 UV illumination 2
1-4 Liquid-Phase Deposition (LPD) 3
1-5 Advantages of Liquid Phase Deposition 5
1-6 Motivation of Doping Nickel 6
Chapter 2 9
Experiments 9
2-1 Deposition System 9
2-2 Cleaning of Substrate 10
2-2.1 ITO-coated glass Cleaning Procedures 10
2-2.2 Glass Cleaning Procedures 10
2-2.3 Silicon substrate Cleaning Procedures 10
2-3 Photoresist coated 11
2-4 Aluminum Metal Cleaning Processes 12
2-5 Preparation of Deposition Solution 12
2-5.1 Preparation of (NH4)2TiF6 solution 13
2-5.2 Preparation of NiF2•4H2O solution 13
2-5.3 Preparation of boric acid solution 13
2-5.4 Preparation of nickel chloride solution 13
2-6 Film Deposition 14
2-6.1 LPD-TiO2 process 14
2-6.2 LPD-NiO process 14
2-6.3 Ni-doped LPD-TiO2 process 14
2-6.4 UV illumination for LPD process 15
2-7 Growth Mechanisms 15
2-7-1 Growth Mechanisms of LPD-TiO2 Films 15
2-7-2 Growth Mechanisms of LPD-NiO Films 16
2-8 Improvements of Electrical Properties by Nickel Doping 17
2-9 Characteristics 17
2-9.1 Physical and Chemical Properties 17
(a) Thickness and Cross-Sectional Morphologies 17
(b) Surface Morphologies 18
(c) Structure 18
(d) Composition 18
2-9.2 Electrical Properties 18
(a) Structure for Electrical Measurement 18
(b) Current-Voltage (I-V) Measurement 19
(c) Capacitance-Voltage Measurement 19
2-9.3 Optical Properties 20
2-9.4 Electrochromic Properties 20
Chapter 3 27
Results and Discussion 27
3-1. LPD-TiO2 film deposited at 40 oC 27
3-1.1 Deposition rate and SEM views of the LPD-TiO2 27
3-1.2 Optical property of the LPD-TiO2 27
3-1.2 ESCA Analysis of LPD-TiO2 Films 28
3-2 UV-TiO2 and LPD-TiO2 film deposited at 30 oC 29
3-2.1 Deposition rate of the UV-TiO2 and LPD-TiO2 29
3-2.2 Atomic force microscopy (AFM) of the UV-TiO2 and LPD-TiO2 29
3-2.3 X-ray Diffraction Spectra of the UV-TiO2 and LPD-TiO2 30
3-2.3 Cyclic voltammograms test of the UV-TiO2 and LPD-TiO2 30
3-2.4 ESCA Analysis of the UV-TiO2 and LPD-TiO2 30
3-2.5 Electrochromic test for optical of the UV-TiO2 and LPD-TiO2 31
3-2.6 Electrochromic test of the UV-TiO2 31
3-3 Ni-doped TiO2 32
3-3.1 Deposition rate of the undoped and Ni-doped LPD-TiO2 32
3-3.2 ESCA Analysis of the Ni-doped LPD-TiO2 32
3-3.3 X-ray Diffraction Spectra of the Ni-doped LPD-TiO2 32
3-3.4 Electrical Characteristics of LPD-TiO2 Films by N2O Annealing 33
3-3.5 Electrical Characteristics of Nickel-doped LPD-TiO2 Films by N2O Annealing 34
3-4 LPD- NiO film deposited at 40 oC 35
3-4.1 Deposition rate and SEM views of the LPD-NiO 35
3-4.2 SEM views of the LPD-NiO 36
3-4.3 Optical property of the LPD-NiO 36
3-4.4 Electrochromic parameters for LPD-NiO films 37
3-5 UV-NiO and LPD-NiO film deposited at 30 oC 40
3-5.1 Deposition rate and SEM views of the LPD-NiO and UV-NiO 40
3-5.2 FTIR Spectra of LPD-NiO and UV-NiO 40
3-5.2 ESCA Analysis of the LPD-NiO and UV-NiO 41
3-5.3 X-ray Diffraction Spectra of the LPD-NiO and UV-NiO 42
3-5.4 Atomic force microscopy (AFM) of the LPD-NiO and UV-NiO 42
3-5.5 Optical property of the LPD-NiO and UV-NiO 42
3-5.6 Cyclic voltammograms of the LPD-NiO and UV-NiO 43
3-6 Transparent conducting LPD- NiO film 43
3-6.1 Deposition rate and SEM views of the transparent conducting LPD-NiO 43
3-6.2 X-ray Diffraction Spectra of the transparent conducting LPD-NiO 44
3-6.3 Optical property of the transparent conducting LPD-NiO 44
3-6.4 Resistivity 44
Chapter 4 92
Conclusions 92
Reference 95
Chapter 1 95
Chapter 2 98
Chapter 3 99
Publication List 105
(a)Journal Papers 105
(b)Conference Papers 106
Autobiography 109

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