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博碩士論文 etd-1116111-120100 詳細資訊
Title page for etd-1116111-120100
論文名稱
Title
運用微機電技術開發具懸浮結構之巴倫器
Development of a Balun with Suspending Structure by MEMS Technology
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
70
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2011-11-15
繳交日期
Date of Submission
2011-11-16
關鍵字
Keywords
電化學沉積、無線通訊系統、微機電技術、懸浮式結構、巴倫器
wireless communication system, MEMS technology, suspending structure, balun, electrochemical deposition
統計
Statistics
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中文摘要
巴倫器在射頻電路中為一不可或缺的關鍵元件,傳統矽基平面式螺旋巴倫器之插入損耗較高。為了改善此問題,本論文首度運用電化學沉積與面型微加工技術開發一種矽基懸浮式螺旋巴倫器,以期能應用於第四代之無線通訊系統中。
為了降低螺旋巴倫器之能量損耗,本論文利用懸浮結構之設計以減少基板與介電層的能量損耗。本論文所製作之懸浮式螺旋巴倫器主要是由三組GSG 底電極、三十三個支撐銅柱及懸浮式螺旋銅導體層等三部份所組成,其製程步驟一共包含(1)四層薄膜沉積製程、(2)四次黃光微影製程、(3)兩次蝕刻製程及(4)兩次銅電鍍製程。此外,本論文利用HFSS 模擬矽基懸浮式螺旋巴倫器之高頻特性。
本論文所完成之矽基懸浮式螺旋巴倫器,藉由商用網路分析儀量測2~8GHz之高頻特性,經量測結果可得,矽基懸浮式螺旋巴倫器之插入損耗於5.2 GHz 為1.26dB、不平衡振幅差小於0.86 dB、不平衡相位差低於3.4 度,而共模拒斥比則為30 dB 以上。綜上所述,本論文運用微機電系統技術,成功開發出矽基懸浮式螺旋巴倫器,可應用於第四代之無線通訊系統開發。
Abstract
Balun is a key component in radio frequency (RF) circuits. The conventional Si-based planar spiral balun presented a high insertion loss. To solve this problem, this thesis firstly develops a Si-based suspending spiral balun using electrochemical deposition and surface micromachining technology for the fourth generation of wireless communication system.

To reduce the power dissipation of the conventional Si-based planar spiral balun, thesis utilized a suspending structure to reduce the power loss through the substrate and dielectric layer. The fabricated suspending spiral balun are constructed by three bottom GSG electrodes, thirty three supporting copper vias and a suspending spiral copper conducting layer. The main fabrication processes in this research including: (1) four thin-film deposition processes, (2) four photolithography processes, (3) two etching processes and (4) two copper electroplating processes. In addition, this thesis used the commercial software (Ansoft HFSS) to analysis the high frequency characteristic of Si-based suspending spiral balun.


The finished Si-based suspending spiral balun were measured by a commercial network analyzer under 2~8 GHz testing frequency range. Based on the measurement results, the value of insertion loss is 1.26 dB at 5.2 GHz, magnitude imbalanced is lower than 0.86 dB, phase imbalanced is less than 3.4 degree and CMRR is more than 30 dB. Finally, this thesis successfully develops a Si-based suspending spiral balun using MEMS technology for the fourth generation wireless communication system.
目次 Table of Contents
摘要 ..................................................................................................................... I
Abstract .................................................................................................................... II
誌謝 ................................................................................................................... III
目錄 .................................................................................................................. IV
圖目錄 .................................................................................................................. VI
表目錄 ................................................................................................................ VIII
第一章 緒論........................................................................................................... 1
1-1 前言 ................................................................................................................. 1
1-2 研究動機 ......................................................................................................... 1
1-3 文獻回顧 ......................................................................................................... 2
1-4 實驗方法與論文架構 ..................................................................................... 6
第二章 元件理論與材料特性介紹....................................................................... 8
2-1 耦合線圈佈局之選擇 ..................................................................................... 8
2-2 螺旋巴倫器之損耗 ....................................................................................... 12
2-2-1 導體損耗 ............................................................................................ 12
2-2-2 鄰近效應之損耗 ................................................................................ 13
2-2-3 介電損耗 ............................................................................................ 14
2-2-4 基板損耗 ............................................................................................ 15
2-2-5 線圈間耦合之損耗 ............................................................................ 16
2-3 巴倫器之特性指標 ....................................................................................... 16
2-4 銅之材料特性與其阻障層之介紹 ............................................................... 17
2-5 銅電鍍沉積原理介紹 ................................................................................... 19
第三章 懸浮式螺旋巴倫器之元件設計與製作................................................. 21
3-1 懸浮式螺旋巴倫器之設計流程與模擬平台 ............................................... 21
3-2 懸浮式螺旋巴倫器之結構設計簡介 ........................................................... 22
3-3 懸浮式螺旋巴倫器之模擬簡介 ................................................................... 23
3-4 懸浮式螺旋巴倫器之光罩佈局設計 ........................................................... 25
3-5 懸浮式螺旋巴倫器之製程整合 ................................................................... 27
3-5-1 懸浮式螺旋巴倫器之製作流程 ........................................................ 27
3-5-2 懸浮式螺旋巴倫器之詳細製程步驟與參數 .................................... 28
3-6 懸浮式螺旋巴倫器之量測平台與參數萃取簡介 ....................................... 36
第四章 實驗結果與討論.................................................................................... .39
4-1 懸浮式螺旋巴倫器之結構分析與問題討論 ............................................... 39
4-1-1 利用掀離製程製作巴倫器之底電極結構 ........................................ 39
4-1-2 電鍍巴倫器之銅柱結構 .................................................................... 40
4-1-3 移除氮化鉭/鉭/銅連接線之結構 ...................................................... 41
4-1-4 電鍍巴倫器之螺旋導體結構 ............................................................ 41
4-1-5 懸浮式螺旋巴倫器之結構釋放 ........................................................ 43
4-2 懸浮式螺旋巴倫器特性指標之量測結果 ................................................... 45
第五章 結論與未來展望..................................................................................... 49
5-1 結論 ............................................................................................................... 49
5-2 未來展望 ....................................................................................................... 50
參考文獻 ............................................................................................................... 51
附 錄 ................................................................................................................... 53
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