鎳矽化合物在不同沉積厚度與基板溫度中，所造成的微結構與殘留應力的變化，ㄧ直都是電性與磁性運用中的重要課題。在本論文中研究不同厚度的鎳薄膜，在不同溫度的矽基板上沉積。藉由奈米壓痕、傅氏轉換紅外光譜、掃描式電子顯微鏡、電性量測、小角度的X光繞射光譜與可見光反射光譜分析樣品的特性。
在奈米壓痕量測對於沉積15到50分鐘鍍膜的鎳薄膜樣品進行分析，由室溫到230 ℃間的基板沉積溫度，發現由其彈性係數與硬度值推導出，沉積30分鐘的鎳薄膜有一最大的薄膜表面應力值發生在88-122 ℃之間，在230 ℃基板沉積溫度下的樣品顯示鍍膜溫度愈高，所得鎳薄膜表面應力值愈小。
此外，一組實驗也比較在室溫下沉積的樣品，經由88 ℃到230 ℃間退火過後與高溫時鍍膜的差異。由小角度的X光繞射光譜中，發現矽化鎳NiSi(103)的相位結構僅會在沉積30分鐘的鎳薄膜與230 ℃的沉積溫度下產生。且沉積鎳薄膜厚度在15及30分鐘樣品上，傅氏轉換紅外光譜中發現共振盪光譜，此共振的行為來自表面鎳薄膜形成奈米尺寸顆粒之間的表面電漿共振。更進一步利用酵素在鎳薄膜樣品上的吸附實驗，由可見光反射光譜圖觀測到樣品在波長471 nm與616 nm處有表面電漿的共振吸收，可證明其上奈米鎳粒子的物理特性。

The microstructure and residual stress of Ni thin film coating on Si influence the properties significantly, which play an important role in advanced applications of the electric and magnetic properties. The properties of Ni thin film deposited on Si at various temperatures and for different thickness have been studied in this work. Samples were characterized by nanoindentation, Fourier transform infrared spectroscopy (FTIR), scanning electron microscope (SEM), electrical measurement, grazing angle X-ray diffraction (XRD) and photo reflection spectroscopy of white light.
The nanoindentation measurements reveal similar loading curves and young’s modulus for Ni thin films on Si at different deposition temperatures. However, the higher the deposition temperature, the lower is the hardness of the Ni thin film on Si. A maximum stress occurs at deposition temperature of 88-122 °C. From FTIR spectra an unusual IR oscillating absorption of the Ni/Si film was observed from the samples which was deposited at 230 °C for 15 min (23 nm) and for 30 min (52 nm) compared to other deposition duration and deposition temperatures at room temperature, 88 °C, and 122 °C. Furthermore, annealing experiments of the samples were performed after deposited at room temperature, and then annealed at respective temperatures of 88, 122, 230 °C for the durations of 15 min and 30 min for comparison. However, the unmoral IR oscillation doesn’t occur else where.
The phase change of Ni/Si was analyzed by grazing angle XRD. A single phase of NiSi (103) structure was observed only in the samples deposited at 230 °C. Further study of the oscillation in the FTIR spectra shows its origin should be related to surface plasmon resonance (SPR) mode. The SPR absorption peaks at 471 nm and 616 nm are analyzed by a photo reflection experiment. The SPR absorption is due to the nano structure of nickel silicide on Ni/Si surface formed during deposition at 230 °C.

致謝 I
中文摘要 II
Abstract III
Symbols Index IV
Content V
Table captions VI
Figure captions VI
1. Introduction 1
1.1 Literature review 1
1.2 Experiment Background 3
1.2.1 FTIR [13] 3
1.2.2 Grazing Angle XRD [14] 3
1.2.3 Nanoindentation [15] 4
1.2.4 Four-Point Probe [19] 8
1.2.5 Spectroscopic measurement 8
2. Experimental Details 10
3. Results and Discussions 13
3.1 Nanoindentation Measurements 13
3.2 Stress Properties of Nickel Thin Film on silicon 16
3.3 FTIR Spectra 17
3.4 SEM measurement 20
3.5 AFM measurement 22
3.6 Grazing Angle X-ray Diffraction Measurements 24
3.7 Electrical Measurements 25
3.8 Reflection Spectra of White Light (SPR mode) 26
4. Conclusions 32
5. Reference 33
Appendix A 35

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